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參數(shù)資料
| 型號： | E28F400BX-T120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP-56 |
| 文件頁數(shù)： | 1/50頁 |
| 文件大小： | 449K |
| 代理商： | E28F400BX-T120 |
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Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
November 1995
COPYRIGHT
INTEL CORPORATION 1995
Order Number 290451-005
4-MBIT (256K X 16 512K X 8)
BOOT BLOCK
FLASH MEMORY FAMILY
28F400BX-TB 28F004BX-TB
Y
x8x16 InputOutput Architecture
28F400BX-T 28F400BX-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
x8-only InputOutput Architecture
28F004BX-T 28F004BX-B
For Space Constrained 8-bit
Applications
Y
Upgradeable to Intel’s Smart Voltage
Products
Y
Optimized High-Density Blocked
Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
Y
Extended Cycling Capability
100000 Block Erase Cycles
Y
Automated WordByte Write and Block
Erase
Command User Interface
Status Registers
Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
1 mA Typical ICC Active Current in
Static Operation
Y
Very High-Performance Read
6080120 ns Maximum Access Time
304040 ns Maximum Output Enable
Time
Y
Low Power Consumption
20 mA Typical Active Read Current
Y
ResetDeep Power-Down Input
02 mAICC Typical
Acts as Reset for Boot Operations
Y
Extended Temperature Operation
b
40 Cto a85 C
Y
Write Protection for Boot Block
Y
Hardware Data Protection Feature
EraseWrite Lockout During Power
Transitions
Y
Industry Standard Surface Mount
Packaging
28F400BX JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
28F004BX 40-Lead TSOP
Y
12V WordByte Write and Block Erase
VPP e 12V g5% Standard
VPP e 12V g10% Option
Y
ETOXTM III Flash Technology
5V Read
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
| E2SDA18-13.560M | QUARTZ CRYSTAL RESONATOR, 13.56 MHz |
| E2SDA18-16.000MTR | QUARTZ CRYSTAL RESONATOR, 16 MHz |
| E2SEA12-16.667M | QUARTZ CRYSTAL RESONATOR, 16.667 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F400BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CVB60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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