- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295865 > E28F320J5-120 (INTEL CORP) StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT PDF資料下載
參數(shù)資料
| 型號： | E28F320J5-120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 中文描述： | 2M X 16 FLASH 5V PROM, 150 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 33/51頁 |
| 文件大小： | 651K |
| 代理商： | E28F320J5-120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當(dāng)前第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
28F320J5 and 28F640J5
Datasheet
39
5.4
Input Signal Transitions – Reducing Overshoots and
Undershoots When Using Buffers/Transceivers
As faster, high-drive devices such as transceivers or buffers drive input signals to flash memory
devices, overshoots and undershoots can sometimes cause input signals to exceed flash memory
specifications (see Section 6.1, Absolute Maximum Ratings). Many buffer/transceiver vendors now
carry bus-interface devices with internal output-damping resistors or reduced-drive outputs.
Internal output-damping resistors diminish the nominal output drive currents, while still leaving
sufficient drive capability for most applications. These internal output-damping resistors help
reduce unnecessary overshoots and undershoots. Transceivers or buffers with balanced- or light-
drive outputs also reduce overshoots and undershoots by diminishing output-drive currents. When
selecting a buffer/transceiver interface design to flash, devices with internal output-damping
resistors or reduced-drive outputs should be considered to minimize overshoots and undershoots.
For additional information, please refer to AP-647, 5 Volt Intel StrataFlash
Memory Design Guide
(order 292205).
5.5
VCC,VPEN, RP# Transitions
Block erase, program, and lock-bit configuration are not guaranteed if VPEN or VCC falls outside of
the specified operating ranges, or RP#
≠ V
IH or VHH.If RP# transitions to VIL during block erase,
program, or lock-bit configuration, STS (in default mode) will remain low for a maximum time of
tPLPH +tPHRH until the reset operation is complete. Then, the operation will abort and the device
will enter reset/power-down mode. The aborted operation may leave data partially corrupted after
programming, or partially altered after an erase or lock-bit configuration. Therefore, block erase
and lock-bit configuration commands must be repeated after normal operation is restored. Device
power-offorRP# = VIL clears the status register.
The CUI latches commands issued by system software and is not altered by VPEN,CE0,CE1,or
CE2 transitions, or WSM actions. Its state is read array mode upon power-up, after exit from reset/
power-down mode, or after VCC transitions below VLKO.VCC must be kept at or above VPEN
during VCC transitions.
After block erase, program, or lock-bit configuration, even after VPEN transitions down to VPENLK,
the CUI must be placed in read array mode via the Read Array command if subsequent access to
the memory array is desired. VPEN must be kept at or below VCC during VPEN transitions.
5.6
Power-Up/Down Protection
The device is designed to offer protection against accidental block erasure, programming, or lock-
bit configuration during power transitions. Internal circuitry resets the CUI to read array mode at
power-up.
A system designer must guard against spurious writes for VCC voltages above VLKO when VPEN is
active. Since WE# must be low and the device enabled (see Table 2) for a command write, driving
WE# to VIH or disabling the device will inhibit writes. The CUI’s two-step command sequence
architecture provides added protection against data alteration.
Keeping VPEN below VPENLK prevents inadvertent data alteration. In-system block lock and
unlock capability protects the device against inadvertent programming. The device is disabled
while RP# = VIL regardless of its control inputs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F320J5A-120 | 制造商:Intel 功能描述: |
| E28F320S5-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| E28F320S5-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| E28F400B5B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F400B5B80 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。