參數(shù)資料
型號： ADUC834BS
廠商： ANALOG DEVICES INC
元件分類： 微控制器/微處理器
英文描述： MicroConverter, Dual 16-/24- Bit ADCs with Embedded 62KB FLASH MCU
中文描述： 8-BIT, FLASH, 12.58 MHz, MICROCONTROLLER, PQFP52
封裝： 14 X 14 MM, MO-022-AC-1, MQFP-52
文件頁數(shù)： 39/72頁
文件大?。?/td> 1451K
代理商： ADUC834BS
REV.
P
rC (12 March 2002)
ADuC834
–
39
–
PRELIMINARY TECHNICAL DATA
USING T HE FLASH/E E DAT A ME MORY
T he 4kBytes of Flash/EE data memory is configured as 1024
pages, each of 4 bytes. As with the other ADuC834 peripherals,
the interface to this memory space is via a group of registers
mapped in the SFR space. A group of four data registers
(EDAT A1
–
4) are used to hold the 4 bytes of data at each
page. T he page is addressed via the two registers EADRH and
EADRL. Finally, ECON is an 8-bit control register that may be
written with one of nine Flash/EE memory access commands to
trigger various read, write, erase, and verify functions.
A block diagram of the SFR interface to the flash/EE data
memory array is shown in figure 29.
E CON
—
Flash/E E Memory Control SFR
Programming of either the flash/EE data memory or the flash/
EE program memory is done through the flash/EE memory
control SFR (ECON). T his SFR allows the user to read, write,
erase or verify the 4 K Bytes of flash/EE data memory or the 54
K Bytes of flash/EE program memory
T able X IV. F lash/E E Memory Parallel Programming Modes
E CON VALUE
COMMAND DE SCRIPT ION
(NORMAL MODE ) (power on default)
COMMAND DE SCRIPT ION
(ULOAD MODE )
01H
RE AD
Results in 4 bytes in the flash/EE data memory,
addressed by the page address EADRH/L, being read
into EDAT A 1 to 4.
Not Implemented. Use the MOVC instruction
02H
WRIT E
Results in
4 bytes
in EDAT A1-4 being written to the
flash/EE data memory, at the page address EADRH/L
(0
≤
EADRH/L<0400h)
Note: T he 4 bytes in the page being addressed must
be pre-erased.
Results in bytes 0-255 of internal X RAM being written
to the
256 bytes
of flash/EE program memory at the
page address EADRH. (0
≤
EADRH<E0H)
Note: T he 256 bytes in the page being addressed must
be pre-erased.
03H
Reserved Command
Reserved Command
04H
VE RIFY
Verifies if the data in EDAT A1-4 is contained in the
page address given by EADRH/L. A subsequent read
of the ECON SFR will result in a 0 being read if the
verification is valid, or a nonzero value being read to
indicate an invalid verification.
Not Implemented. Use the MOVC and MOVX
Instructions to verify the WRIT E in software
05H
E RASE PAGE
Results in the Erase of the
4 byte page
of flash/EE data Results in the
64 Byte page
of flash/EE program
memory addressed by the page address EADRH/L
memory, addressed by the byte address EADRH/L
being erased. EADRL can equal any of 64 locations
within the page. A new page starts whenever EADRL is
equal to 00h, 40h, 80h or C0h
06H
E RASE ALL
Results in the erase of entire 4kBytes of flash/EE
data memory.
Results in the Erase of the entire 56kBytesof ULOAD
flash/EE program memory.
81H
RE ADBYT E
Results in the byte in the flash/EE data memory,
addressed by the
byte address E ADRH/L
, being read
into EDAT A1. (0
≤
EADRH/L
≤
0FFFh.)
Results in the byte in the flash/EE program memory,
addressed by the
byte address E ADRH/L
, being read
into EDAT A1. (0
≤
EADRH/L
≤
F7FFh.)
81H
WRIT E BYT E
Results in the byte in EDAT A1 being written into
flash/EE data memory, at the byte address EADRH/L.
Results in the byte in EDAT A1 being written into
flash/EE prog memory, at the byte address EADRH/L.
0FH
E X ULOAD
Leaves the ECON instructions operate on the
flash/EE data memory.
E nters NORMAL mode
allowing subsequent ECON
instructions operate on the flash/EE program memory.
F0H
ULOAD
E nters ULOAD mode
allowing subsequent ECON
instructions operate on the flash/EE data memory.
Leaves the ECON instructions operate on the flash/EE
program memory.
Byte 1
Byte 1
Byte 1
Byte 1
Byte 2
Byte 2
Byte 2
Byte 2
Byte 3
Byte 3
Byte 3
Byte 3
Byte 4
Byte 4
Byte 4
Byte 4
Byte 1
Byte 2
Byte 3
Byte 4
Byte 1
Byte 2
Byte 3
Byte 4
01h
00h
02h
03h
3FEh
3FFh
P
(
Figure 29. Flash/EE Data Memory Control and Configuration
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