參數(shù)資料
型號： 28F320D18
廠商： Intel Corp.
英文描述： 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器)
中文描述： 1.8 V的英特爾雙平面閃存（1.8伏英特爾雙平面閃速存儲器）
文件頁數(shù)： 81/83頁
文件大?。?/td> 836K
代理商： 28F320D18
28F320D18
Product Preview
77
NOTES:
1. The variable P is a pointer which is defined at CFI offset 15h.
2. For a 1-Mb 1.8 Volt Dual-Plane Flash memory, z
= 0100h = 256
256 * 256 = 64K, y
= 17h = 23d
y1+1
= 24
24 * 64K = 1MB
Partition 2’s offset is 0018 0000h bytes (000C 0000h words).
(P+3B)h
(P+33)h
Partition 2 (Erase Region 1) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserved for future use
Partition 2 (Erase Region 1) page mode and synchronous mode
capabilities as defined in
Table 19
.
bit 0 = page mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Partition Region 2 Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(top parameter device only)
1
74:
6C:
(P+3C)h
(P+34)h
1
75:
6D:
(P+35)h
(P+36)h
(P+37)h
4
6E:
6F:
70:
(P+38)h
(P+39)h
71:
72:
Partition 2 (Erase Region 2) minimum block erase cycles x 1000
(top parameter device only)
Partition 2 (Erase Region 2) bits per cell (top parameter only)
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserved for future use
Partition 2 (Erase Region 2) page mode and synchronous mode
capabilities as defined in
Table 19
. (top parameter only
bit 0 = page mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Features Space definitions (
reserved for future use
)
Reserved for future use
2
(P+3A)h
(P+3B)h
73:
74:
1
(P+3C)h
1
75:
(P+3D)h
(P+3E)h
(P+3D)h
(P+3E)h
TBD
Rsv'd
76:
77:
76:
77:
Partition Region 2 Information
Bottom
Offset
(1)
P = 39H
Top
Offset
(1)
P = 39H
Description
(Optional Flash Features and Commands)
See Table 24
Length
Address
Bottom
Top
相關(guān)PDF資料
PDF描述
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
28F400BL-TB 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BV-TB 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F320S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*