參數(shù)資料
型號(hào): 28F320D18
廠商: Intel Corp.
英文描述: 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
中文描述: 1.8 V的英特爾雙平面閃存(1.8伏英特爾雙平面閃速存儲(chǔ)器)
文件頁數(shù): 57/83頁
文件大?。?/td> 836K
代理商: 28F320D18
28F320D18
Product Preview
53
8.4
DC Characteristics
(1)
Sym
Parameter
(1)
Note
Min
Typ
Max
Unit
Test Condition
I
LI
Input Load Current
±1
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max,
V
IN
= V
CCQ
or V
SSQ
I
LO
Output Leakage Current
2
±1
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max,
V
IN
= V
CCQ
or V
SSQ
I
CCS
V
CC
Standby Current
13
20
μA
V
= V
CC
Max, CE# = RST# =V
,
WP# = V
CCQ
or V
SSQ
, A
18
= A
19
= V
CC
±
0.2V
I
CCR
Average
V
Read
Current
Page Mode
3
12
18
mA
4 Word Read
f = 13 MHz
V
CC
= V
CC
Max
Synchronous
CLK = 13 MHz
3, 4
9
13
mA
Burst length = 4
CE#=V
, OE#=V
IH
,
Inputs = V
IH
or V
IL
11
17
mA
Burst length = 8
42
59
mA
Burst length =
Continuous
Synchronous
CLK = 40 MHz
3, 4
20
29
mA
Burst length = 4
f = 40 MHz
V
CC
= V
CC
Max
28
40
mA
Burst length = 8
CE#=V
, OE#=V
IH
,
Inputs = V
IH
or V
IL
42
59
mA
Burst length =
Continuous
I
CCW +
V
CC
Program Current
5, 6
30
55
mA
V
PP
= V
PP1
, program in progress
I
PPW
18
35
mA
V
PP
= V
PP2
, program in progress
I
CCE+
V
CC
Block Erase Current
5, 7
30
45
mA
V
PP
= V
PP1
, block erase in progress
I
PPE
16
35
mA
V
PP
= V
PP2
, block erase in progress
I
CCWS
V
CC
Program Suspend Current
5, 8
13
20
μA
CE# = V
IH
, program suspend in
progress
I
CCES
V
CC
Erase Suspend Current
5, 8
13
20
μA
CE# = V
IH
, block erase suspend in
progress
I
PPS
V
PP
Standby Current
0.5
1
μA
V
PP
V
CC
I
PPR
V
PP
Read Current
0.5
1
μA
V
PP
V
CC
I
PPWS
V
PP
Program Suspend Current
5
0.5
1
μA
V
PP
= V
PP1/2
, program suspended
I
PPES
V
PP
Erase Suspend Current
5
0.5
1
μA
V
PP
= V
PP1/2
, erase suspended
V
IL
Input Low Voltage
-0.4
0.4
V
V
IH
Input High Voltage
V
- 0.4
V
+0.4
V
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