參數(shù)資料
型號(hào)： 28F320D18
廠商： Intel Corp.
英文描述： 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
中文描述： 1.8 V的英特爾雙平面閃存（1.8伏英特爾雙平面閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 46/83頁(yè)
文件大?。?/td> 836K
代理商： 28F320D18
28F320D18
42
Product Preview
7.2.2.1
Basic Status Register Read
The first example shows how to read the status register of the top partition. The current state of the
partition is read array mode, and the bottom partition is idle. This is shown on the state table as row
3. When a Read Status Register command (70H) is issued, the next state becomes Read Status
(Table 11, row 18). Subsequent reads from this partition will output status register data.
Throughout these operations, the bottom partition stays idle.
7.2.2.2
Erase Suspend to Read
The next example will show how to suspend an erase operation in the top partition to read
information from the same partition. The current state of the top partition is read array mode, and
the bottom partition is idle (row 3). When an Erase Setup command (20H) is issued, the partition is
put into an Erase Setup state (row 63). In order to start the erase, an Erase Confirm command is
given which puts the partition into an Erase (busy) state (row 74). Before the erase has completed,
information needs to be read from a different block within the same partition. To do this, an Erase
Suspend (B0H) command is issued. This is the only command that this partition will accept; all
other commands will be ignored. The partition then goes into an Erase Suspend Read Status state
(row 77). The status register can be read to determine when the erase has been successfully
suspended. At this point a Read Array command can be given which puts the partition into erase
suspend read array mode (row 81). Array data can now be read. The partition will stay in this
mode, and the erase will stay suspended until an Erase Resume command (D0H) is issued which
returns the partition back to an Erase (busy) state. When the erase has completed, the partition will
go into the Erase (done) state (row 72), and the partition is ready to accept another command.
7.2.2.3
Read While Erase/Program
This example will describe reading from the bottom partition while the top partition is in erase
mode. The top and bottom partitions are both initially in read array mode (row 3). The top partition
is issued an Erase Setup (20H) command putting the partition into an Erase Setup state (row 63).
An Erase Confirm command is then given, putting the top partition into an Erase (busy) state.
Information from the bottom partition then needs to be read. The state table is now used to show
the state of the bottom partition, which has become the current partition. Its state is shown in row 2.
The partition is already in read array mode, so the Read Array command does not have to be
issued. If, however, the device is in a different read mode, such as read status mode, then a Read
Array command will have to be issued. The block in the top partition continues to be erased
throughout the read cycle. When the erase has completed, the current state of the top partition is
shown by row 71, and the partition is ready to accept a new command.
7.2.2.4
Read While Program-Suspend During Erase-Suspend
This example will outline reading from the bottom partition while the top partition is in erase
suspend mode and the bottom partition is in program mode. Both top and bottom partitions are
initially in read array mode. An Erase Setup command is issued to the top partition, putting it into
Erase Setup, row 63. An Erase Confirm command is then issued to the top partition which starts
erasing the block (row 74). At this point data needs to be programmed into the bottom partition.
The erase in the top partition is suspended by issuing the Erase Suspend command. The state table
is now used to show the state of the bottom partition. Its current state is shown in row 4; it is in read
array mode while the other partition is in Erase Suspend mode. A Program Setup command is
issued to the bottom partition. The next command to the partition programs the device, and puts the
partition into the Program (busy) state, row 45. At this point, data from the bottom partition needs
to be read. Its program cycle is suspended with a Program Suspend command. Its current state is
shown in row 53. Issuing a Read Array command to the bottom partition will put it into the
相關(guān)PDF資料
PDF描述
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
28F400BL-TB 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BV-TB 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F320S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*