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參數(shù)資料
| 型號(hào)： | 28F320D18 |
| 廠商： | Intel Corp. |
| 英文描述： | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器) |
| 中文描述： | 1.8 V的英特爾雙平面閃存（1.8伏英特爾雙平面閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 30/83頁(yè) |
| 文件大?。?/td> | 836K |
| 代理商： | 28F320D18 |
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28F320D18
26
Product Preview
0672_08
Figure 8. Automated Program Flowchart
Suspend
Program
Loop
Start
Write 40H,
Address
Write Data and
Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Program Complete
FULL STATUS CHECK PROCEDURE
Repeat for subsequent byte writes.
SR full status check can be done after each word write or after a
sequence of program operations.
Write FFH after the last word write operation to place device in read
array mode.
SR.4, SR.3 and SR.1 are only cleared by the Clear Staus Register
command, in cases where multiple locations are written before full
status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
No
Yes
Suspend
Program
1
0
Comments
Data = 40H
Addr = Location to Be
Written
Data = Data to Be Written
Addr = Location to Be
Written
Status Register Data
Addr = Location to Be
Written
Check SR.7
1 = WSM Ready
0 = WSM Busy
Comments
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect Detect
Read Status Register
Data (See Above)
V
PP
Range Error
Device Protect Error
Program Successful
SR.3 =
SR.1 =
1
0
1
0
Program Error
SR.4 =
1
0
Check SR.4
1 = Program Error
Bus Operation
Write
Write
Standby
Read
Command
Program Setup
Data
Bus Operation
Standby
Standby
Standby
Command
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