參數(shù)資料
型號(hào): 28F320D18
廠商: Intel Corp.
英文描述: 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
中文描述: 1.8 V的英特爾雙平面閃存(1.8伏英特爾雙平面閃速存儲(chǔ)器)
文件頁數(shù): 24/83頁
文件大?。?/td> 836K
代理商: 28F320D18
28F320D18
20
Product Preview
Table 8. Read Configuration Register Definition
RM
R
FC2
FC1
FC0
R
DOC
WC
15
14
13
12
11
10
9
8
BS
CC
R
R
BW
BL2
BL1
BL0
7
6
5
4
3
2
1
0
NOTES:
RCR.15 = READ MODE (RM)
0 = Synchronous Burst Reads Enabled
1 = Asynchronous Reads Enabled (Default)
Read mode configuration affects reads from main blocks.
Parameter block, status register, and configuration reads
support single read cycles.
RCR.14 = RESERVED FOR FUTURE ENHANCEMENTS (R)
This bit is reserved for future use. Set reserved bits to “0.”
RCR.13–11 = FREQUENCY CONFIGURATION (FC2-0)
000 = Code 0 reserved for future use
001 = Code 1 reserved for future use
010 = Code 2
011 = Code 3
100 = Code 4
101 = Code 5 reserved for future use
110 = Code 6 reserved for future use
111 = Code 7 reserved for future use (Default)
See
Section 4.10.2
for information about the frequency
configuration and its effect on the initial read.
Undocumented combinations of bits
RCR.14–11 are reserved by Intel Corporation for future
implementations and should not be used.
RCR.10 = RESERVED FOR FUTURE ENHANCEMENTS (R)
This bit is reserved for future use. Set reserved bits to “0.”
RCR.9 = DATA OUTPUT CONFIGURATION (DOC)
0 = Hold Data for One Clock
1 = Reserved for future use (Default)
Undocumented combinations of bits RCR.10–9 are reserved
by Intel Corporation for future implementations and should not
be used.
RCR.8 = WAIT CONFIGURATION (WC)
0 = WAIT# Asserted During Delay
1 = WAIT# Asserted One Data Cycle Before Delay (Default)
RCR.7 = BURST SEQUENCE (BS)
0 = Intel Burst Order
1 = Linear Burst Order (Default)
RCR.6 = CLOCK CONFIGURATION (CC)
0 = Burst Starts and Data Output on Falling Clock Edge
1 = Burst Starts and Data Output on Rising Clock Edge
(Default)
RCR.5-4 = RESERVED FOR FUTURE ENHANCEMENTS (R)
These bits are reserved for future use. Set reserved bits to “0.”
RCR.3 = BURST WRAP (BW)
0 = Wrap bursts within burst length set by RCR.2-0
1 = Don’t wrap accesses within burst length set by
RCR.2-0.(Default)
See
Section 4.10.7
for information about the BURST WRAP
configuration.
RCR.2–0 = BURST LENGTH (BL2–0)
001 = 4 Word Burst
010 = 8 Word Burst
011 = Reserved for future use
111 = Continuous (Linear) Burst (Default)
In the asynchronous page mode, the burst length always
equals four words.
相關(guān)PDF資料
PDF描述
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
28F400B3 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
28F400BL-TB 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BV-TB 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F320S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY