參數(shù)資料
型號(hào): 28F320D18
廠商: Intel Corp.
英文描述: 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
中文描述: 1.8 V的英特爾雙平面閃存(1.8伏英特爾雙平面閃速存儲(chǔ)器)
文件頁數(shù): 20/83頁
文件大?。?/td> 836K
代理商: 28F320D18
28F320D18
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4.0
Command Definitions
Device operations are selected by writing specific commands into a partition’s CUI. Since
commands are partition-specific, it’s important to write commands within the target partition’s
address range (see
Table 5 on page 15
).
4.1
Read Array Command
Upon initial device power-up or after reset, both partitions default to read array mode and to the
asynchronous read configuration power-up state. The Read Array command places the addressed
partition into read array mode. Once the WSM starts a block erase or program on a partition, it will
not recognize the Read Array command until the WSM completes its operation or until the WSM is
suspended by an Erase or Program Suspend command. However, a Read Array command in the
other partition will be accepted.
4.2
Read Device Identification Command
The read device identification mode is initiated by writing the Read Device Identification
command to the bottom partition. The top partition’s mode is not affected by this operation. See
Table 6
, for device identifier code values.
NOTE:
1. Sampled, not 100% tested.
2. RCR = Read Configuration Register
3. PR-LK = Protection Register Lock
4. PR = Protection Register
4.3
Read Query Command
The Read Query command is available only in the bottom partition and puts that partition into the
read query mode. Partition reads will output Common Flash Interface (CFI) information.
Table 6. Identifier Codes
Code
Address
Data
Manufacturer Code
00000
0089
Device Code
32 Mbit
-T
00001
88D2
32 Mbit
-B
00001
88D3
Block Lock Configuration
Block Is Unlocked
Block Is Locked
Block Is Locked-Down
Block
Address
+002
Lock
DQ
0
= 0
DQ
0
= 1
DQ
1
= 1
RCR
(2)
Read Configuration Register
(1)
00005
Protection Register Lock
0080
PR-LK
(3)
Protection Register
0081-0088
PR
(4)
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