參數(shù)資料
型號: 28F128J3A
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
中文描述: 3伏特英特爾StrataFlash存儲(chǔ)器(128兆位3伏地層的閃速存儲(chǔ)器)
文件頁數(shù): 57/58頁
文件大?。?/td> 574K
代理商: 28F128J3A
28F128J3A, 28F640J3A, 28F320J3A
PRODUCT PREVIEW
51
7.0
ORDERING INFORMATION
NOTE:
1. These speeds are for either the standard asynchronous read access times or for the first access of a page-
mode read sequence.
VALID COMBINATIONS
R C 2 8 F 1 2 8 J 3
- 1 5 0
Package
E = 56-Lead TSOP
RC = 64-Ball Easy BGA
Product line designator
for all Intel Flash
products
Access Speed (ns)
(1)
128 Mbit = 150
64 Mbit = 120
32 Mbit = 100
Product Family
J = Intel StrataFlash
TM
memory,
2 bits-per-cell
Device Density
128 = x8/x16 (128 Mbit)
640 = x8/x16 (64 Mbit)
320 = x8/x16 (32 Mbit)
Voltage (V
CC
/V
PEN
)
3 = 3V/3V
A
Intel 0.25 micron
ETOX VI Process
Technology
56-Lead TSOP
64-Ball Easy BGA
E28F128J3A-150
RC28F128J3A-150
E28F640J3A-120
RC28F640J3A-120
E28F3203A-100
RC28F3203A-100
相關(guān)PDF資料
PDF描述
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲(chǔ)器)
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