參數(shù)資料
型號(hào)： 28F128J3A
廠商： Intel Corp.
英文描述： 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
中文描述： 3伏特英特爾StrataFlash存儲(chǔ)器（128兆位3伏地層的閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 12/58頁(yè)
文件大?。?/td> 574K
代理商： 28F128J3A
28F128J3A, 28F640J3A, 28F320J3A
6
PRODUCT PREVIEW
Commands are written using standard micro-processor write timings. The CUI contents serve as
input to the WSM, which controls the block erase, program, and lock-bit configuration. The
internal algorithms are regulated by the WSM, including pulse repetition, internal verification, and
margining of data. Addresses and data are internally latched during program cycles.
Interface software that initiates and polls progress of block erase, program, and lock-bit
configuration can be stored in any block. This code is copied to and executed from system RAM
during flash memory updates. After successful completion, reads are again possible via the Read
Array command. Block erase suspend allows system software to suspend a block erase to read or
program data from/to any other block. Program suspend allows system software to suspend a
program to read data from any other flash memory array location.
2.1
Data Protection
Depending on the application, the system designer may choose to make the V
switchable
(available only when memory block erases, programs, or lock-bit configurations are required) or
hardwired to V
. The device accommodates either design practice and encourages optimization
of the processor-memory interface.
When V
≤
V
, memory contents cannot be altered. The CUI’s two-step block erase, byte/word
program, and lock-bit configuration command sequences provide protection from unwanted
operations even when V
is applied to V
. All program functions are disabled when V
is
below the write lockout voltage V
or when RP# is V
. The device’s block locking capability
provides additional protection from inadvertent code or data alteration by gating erase and program
operations.
3.0
BUS OPERATION
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash
memory conform to standard microprocessor bus cycles.
相關(guān)PDF資料
PDF描述
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F128J3A150 制造商: 功能描述: 制造商:INTELC 功能描述: 制造商:undefined 功能描述:
28F128J3A-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F128J3D75 制造商: 功能描述: 制造商:Intel 功能描述:
28F128J3FS-12ET 制造商: 功能描述: 制造商:undefined 功能描述:
28F128L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*