參數(shù)資料
型號： S71PL129JC0BFI9P3
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的快閃記憶體
文件頁數(shù)： 80/149頁
文件大?。?/td> 2693K
代理商： S71PL129JC0BFI9P3
80
pSRAM Type 6
pSRAM_Type06_14_A1 Ocotober 16, 2004
A d v a n c e I n f o r m a t i o n
Functional Description
Legend:
L = Low-level Input (V
IL
), H = High-level Input (V
IH
), X = V
IL
or V
IH
, High-Z = High Impedance.
Absolute Maximum Ratings
Note:
ESD I mmunity:
Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are
developed by Spansion and component devices that are developed by a third party (third-party components). Spansion
components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory
Qualification Database. Third-party components are neither tested nor guaranteed by Spansion for ESD immunity. How-
ever, ESD test results for third-party components may be available from the component manufacturer. Component man-
ufacturer contact information is listed in the Spansion MCP Qualification Report, when available. The Spansion Flash
memory Qualification Database and Spansion MCP Qualification Report are available from Spansion sales offices.
DC Recommended Operating Conditions (Ta = -40°C to 85°C)
Note:
V
IH
(Max) V
DD
= 1.0 V with 10 ns pulse width. V
IL
(Min) -1.0 V with 10 ns pulse width.
Mode
CE1#
CE2
OE#
W E#
LB#
UB#
Address
I / O
1-8
I / O
9-16
Pow er
Read (Word)
L
H
L
H
L
L
X
D
OUT
D
OUT
I
DDO
Read (Lower Byte)
L
H
L
H
L
H
X
D
OUT
High-Z
I
DDO
Read (Upper Byte)
L
H
L
H
H
L
X
High-Z
D
OUT
I
DDO
Write (Word)
L
H
X
L
L
L
X
D
IN
D
IN
I
DDO
Write (Lower Byte)
L
H
X
L
L
H
X
D
IN
Invalid
I
DDO
Write (Upper Byte)
L
H
X
L
H
L
X
Invalid
D
IN
I
DDO
Outputs Disabled
L
H
H
H
X
X
X
High-Z
High-Z
I
DDO
Standby
H
H
X
X
X
X
X
High-Z
High-Z
I
DDO
Deep Power-down Standby
H
L
X
X
X
X
X
High-Z
High-Z
I
DDSD
Symbol
Rating
Value
Unit
V
DD
Power Supply Voltage
-1.0 to 3.6
V
V
IN
Input Voltage
-1.0 to 3.6
V
V
OUT
Output Voltage
-1.0 to 3.6
V
T
opr
Operating Temperature
-40 to 85
°C
T
strg
Storage Temperature
-55 to 150
°C
P
D
Power Dissipation
0.6
W
I
OUT
Short Circuit Output Current
50
mA
Symbol
Parameter
Min
Typ
Max
Unit
V
DD
Power Supply Voltage
2.6
2.75
3.3
V
V
IH
Input High Voltage
2.0
—
V
DD
+ 0.3 (Note)
V
IL
Input Low Voltage
-0.3 (Note)
—
0.4
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