參數(shù)資料
型號(hào)： S71PL129JC0BFI9P3
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的快閃記憶體
文件頁數(shù)： 78/149頁
文件大?。?/td> 2693K
代理商： S71PL129JC0BFI9P3
78
S29PL129J for MCP
S29PL129J_MCP_00_A0 June 4, 2004
A d v a n c e I n f o r m a t i o n
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern. All values are subject to change.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles. All values are subject to change.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table 12
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Figure 23. Timing Diagram for Alternating Between CE1# and CE2# Control
Table 25. Erase And Programming Performance
Parameter
Typ (
Note 1
)
Max (
Note 2
)
Unit
Comments
Sector Erase Time
0.5
2
sec
Excludes 00h programming
prior to erasure (
Note 4
)
Chip Erase Time
PL129J
135
216
sec
Word Program Time
6
100
μs
Excludes system level
overhead (
Note 5
)
Accelerated Word Program Time
4
60
μs
Chip Program Time
(
Note 3
)
PL129J
50.4
200
sec
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
C
OUT
C
IN2
C
IN3
Input Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
V
IN
= 0
6.3
7
pF
Output Capacitance
7.0
8
pF
Control Pin Capacitance
5.5
8
pF
WP#/ACC Pin Capacitance
11
12
pF
CE1#
t
CCR
t
CCR
CE2#
相關(guān)PDF資料
PDF描述
S71WS-J Stacked Multi-Chip Product (MCP)
S71WS256PD0HF3SR3 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
S71WS256PC0KF3SL2 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
S71WS256PC0KF3SL3 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
S71WS256PC0KF3SR0 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71PL129JC0BFI9U0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JC0BFI9U2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JC0BFI9U3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JC0BFI9Z0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129JC0BFI9Z2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*