- 您現(xiàn)在的位置：買賣IC網 > PDF目錄365447 > S71PL129JC0BFI9P3 (Spansion Inc.) Stacked Multi-Chip Product (MCP) Flash Memory PDF資料下載
參數資料
| 型號： | S71PL129JC0BFI9P3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory |
| 中文描述： | 堆疊式多芯片產品（MCP）的快閃記憶體 |
| 文件頁數： | 15/149頁 |
| 文件大?。?/td> | 2693K |
| 代理商： | S71PL129JC0BFI9P3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁
June 4, 2004 S29PL129J_MCP_00_A0
S29PL129J for MCP
15
A d v a n c e I n f o r m a t i o n
write cycles to program data instead of four. Device erasure occurs by executing
the erase command sequence.
The host system can detect whether a program or erase operation is complete by
reading the DQ7 (Data# Polling) and DQ6 (toggle)
status bits
. After a program
or erase cycle has been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardw are data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/ Erase Resume
feature enables the user to put erase on
hold for any period of time to read data from, or program data to, any sector that
is not selected for erasure. True background erase can thus be achieved. If a read
is needed from the Secured Silicon Sector area (One Time Program area) after
an erase suspend, then the user must use the proper command sequence to
enter and exit this region.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the
automatic sleep mode
.
The system can also place the device into the standby mode. Power consumption
is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The data is programmed using hot electron injection.
相關PDF資料 |
PDF描述 |
|---|---|
| S71WS-J | Stacked Multi-Chip Product (MCP) |
| S71WS256PD0HF3SR3 | 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS256PC0KF3SL2 | 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS256PC0KF3SL3 | 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
| S71WS256PC0KF3SR0 | 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S71PL129JC0BFI9U0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
| S71PL129JC0BFI9U2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
| S71PL129JC0BFI9U3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
| S71PL129JC0BFI9Z0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
| S71PL129JC0BFI9Z2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。