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參數(shù)資料
| 型號(hào)： | S29CD016G0JFFM012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動(dòng)，同步讀/寫閃存與VersatileI內(nèi)存/輸出 |
| 文件頁(yè)數(shù)： | 81/87頁(yè) |
| 文件大小： | 792K |
| 代理商： | S29CD016G0JFFM012 |
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November 14, 2005 S29CD-G_00_B0
S29CD-G Flash Family
79
P r e l i m i n a r y
Erase and Programming Performance
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, 2.5 V V
CC
, 100K cycles. Additionally,
programming typicals assume checkerboard pattern.
Under worst case conditions of 145°C, V
CC
= 2.5 V, 1M cycles.
The typical chip programming time is considerably less than the maximum chip programming time listed.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See
Table 41
and
Table 42
for further information on command definitions.
PPBs have a program/erase cycle endurance of 100 cycles.
2.
3.
4.
5.
6.
Latchup Characteristics
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
PQFP and Fortified BGA Pin Capacitance
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ
( Note 1)
Max
( Note 2)
Unit
Comments
Sector Erase Time
1.0
5
s
Excludes 00h programming prior to erasure (Note 4)
Chip Erase Time
16 Mb = 46
32 Mb = 78
16 Mb = 230
32 Mb = 460
s
Double Word Program Time
18
250
μs
Excludes system level overhead (Note 5)
Accelerated Double Word Program Time
8
130
μs
Accelerated Chip Program Time
16 Mb = 5
32 Mb = 10
16 Mb = 50
32 Mb = 100
s
Chip Program Time (Note 3)
x32
16 Mb = 12
32 Mb = 24
16 Mb = 120
32 Mb = 240
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins (including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
–1.0 V
V
CC
+ 1.0 V
+ 100 mA
–100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0
V
OUT
= 0
6
7.5
pF
Output Capacitance
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
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| S29CD016G0JFFM110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM200 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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