參數(shù)資料
型號(hào)： S29CD016G0JFFM012
廠商： Spansion Inc.
英文描述： 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
中文描述： 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動(dòng)，同步讀/寫(xiě)閃存與VersatileI內(nèi)存/輸出
文件頁(yè)數(shù)： 4/87頁(yè)
文件大小： 792K
代理商： S29CD016G0JFFM012
2
S29CD-G Flash Family
S29CD-G_00_B0 November 14, 2005
P r e l i m i n a r y
General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash
Memory with VersatileI/O manufactured on 170 nm Process Technology.
The S29CD032G is a 32 Megabit, 2.6 Volt-only (2.50 V - 2.75 V) single power supply burst mode
flash memory device that can be configured for 1,048,576 double words.
The S29CD016G is a 16 Megabit, 2.6 Volt-only (2.50 V - 2.75 V) single power supply burst mode
flash memory device that can be configured for 524,288 double words.
To eliminate bus contention, each device has separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls. Additional control inputs are required for synchronous burst oper-
ations: Load Burst Address Valid (ADV#), and Clock (CLK).
Each device requires only a single 2.6 Volt-only (2.50 V – 2.75 V) for both read and write func-
tions. A 12.0-volt V
PP
is not required for program or erase operations, although an acceleration
pin is available if faster programming performance is required.
The device is entirely command set compatible with the JEDEC single-power-supply Flash stan-
dard. The software command set is compatible with the command sets of the 5 V Am29F or
MBM29F and 3 V Am29LV or MBM29LV Flash families. Commands are written to the command
register using standard microprocessor write timing. Register contents serve as inputs to an in-
ternal state-machine that controls the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
The
Unlock Bypass
mode facilitates faster programming times by requiring only two write cycles
to program data instead of four.
The
Simultaneous Read/ W rite architecture
provides simultaneous operation by dividing the
memory space into two banks. The device can begin programming or erasing in one bank, and
then simultaneously read from the other bank, with zero latency. This releases the system from
waiting for the completion of program or erase operations. See
Simultaneous Read/Write Opera-
tions Overview
.
The device provides a 256-byte
Secured Silicon Sector
that contains Electronic Marking Infor-
mation for easy device traceability.
In addition, the device features several levels of sector protection, which can disable both the pro-
gram and erase operations in certain sectors or sector groups:
Persistent Sector Protection
is
a command sector protection method that replaces the old 12 V controlled protection method;
Passw ord Sector Protection
is a highly sophisticated protection method that requires a pass-
word before changes to certain sectors or sector groups are permitted;
W P# Hardw are
Protection
prevents program or erase in the two outermost 8 Kbytes sectors of the larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must then choose if
the Standard or Password Protection method is most desirable. The WP# Hardware Protection
feature is always available, independent of the other protection method chosen.
The
VersatileI / O ( V
CCQ
)
feature allows the output voltage generated on the device to be de-
termined based on the V
IO
level. This feature allows this device to operate in the 1.8 V I/O
environment, driving and receiving signals to and from other 1.8 V devices on the same bus.
The host system can detect whether a program or erase operation is complete by observing the
RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle)
status bits
. After a program
or erase cycle is completed, the device is ready to read array data or accept another command.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
相關(guān)PDF資料
PDF描述
S29CD016G0JFFM100 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016G0JFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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