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參數(shù)資料
| 型號(hào)： | S29CD016G0JFFM012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動(dòng)，同步讀/寫閃存與VersatileI內(nèi)存/輸出 |
| 文件頁(yè)數(shù)： | 25/87頁(yè) |
| 文件大小： | 792K |
| 代理商： | S29CD016G0JFFM012 |
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November 14, 2005 S29CD-G_00_B0
S29CD-G Flash Family
23
P r e l i m i n a r y
Device Operations
This section describes the requirements and use of the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any addres-
sable memory location. The register is composed of latches that store the commands, along with
the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device.
Table 27
lists the device bus operations, the inputs and control levels they require,
and the resulting output. The following subsections describe each of these operations in further
detail.
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, X = Don’t care.
Notes:
1.
WP# controls the two outermost sectors of the top boot block or the two outermost sectors of the bottom boot block.
2.
DQ0 reflects the sector PPB (or sector group PPB) and DQ1 reflects the DYB
VersatileI/O (V
IO
) Control
The VersatileI/O (V
IO
) control allows the host system to set the voltage levels that the device gen-
erates at its data outputs and the voltages tolerated at its data inputs to the same voltage level
that is asserted on the V
IO
pin.
The output voltage generated on the device is determined based on the V
IO
(V
CCQ
) level. For the
2.6 V V
CC
Mask Option, a V
IO
of 1.65 V – 1.95 V allows the device to interface with I/Os lower
than 2.5 V. Vcc = VIO (2.5 V to 2.75V) make the device appear as a 2.5 V only.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to V
IL
. CE# is
the power control and selects the device. OE# is the output control and gates array data to the
output pins. WE# should remain at V
IH
.
Table 27. Device Bus Operation
Operation
CE# OE# W E# RESET#
CLK
ADV#
Addresses
Data
( DQ0– DQ31)
Read
L
L
H
H
X
X
A
IN
A
IN
D
OUT
D
IN
Asynchronous Write
L
H
L
H
X
X
Synchronous Write
L
H
L
H
A
IN
D
IN
Standby (CE#)
H
X
X
H
X
X
X
HIGH Z
Output Disable
L
H
H
H
X
X
HIGH Z
HIGH Z
Reset
X
X
X
L
X
X
X
HIGH Z
PPB Protection Status (Note 2)
L
L
H
H
X
X
Sector Address,
A9 = V
,
A7 – A0 = 02h
00000001h, (protected)
A6 = H
00000000h (unprotect)
A6 = L
Burst Read Operations
Load Starting Burst Address
L
X
H
H
A
IN
X
Advance Burst to next address
with appropriate Data presented
on the Data bus
L
L
H
H
H
X
Burst Data Out
Terminate Current Burst
Read Cycle
H
X
H
H
X
X
HIGH Z
Terminate Current Burst
Read Cycle with RESET#
X
X
H
L
X
X
X
HIGH Z
Terminate Current Burst
Read Cycle;
Start New Burst Read Cycle
L
H
H
H
A
IN
X
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0JFFM100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM102 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM200 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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