參數(shù)資料
型號： S29CD016G0JFFM012
廠商： Spansion Inc.
英文描述： 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
中文描述： 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內(nèi)存/輸出
文件頁數(shù)： 47/87頁
文件大?。?/td> 792K
代理商： S29CD016G0JFFM012
November 14, 2005 S29CD-G_00_B0
S29CD-G Flash Family
45
P r e l i m i n a r y
Note:
See
Table 41
and
Table 42
for program command sequence.
Figure 4. Program Operation
Unlock Bypass Entry Command
The Unlock Bypass command, once issued, is used to bypass the
unlock
sequence for program,
chip erase, and CFI commands. This feature permits slow PROM programmers to significantly im-
prove programming/erase throughput since the command sequence often requires microseconds
to execute a single write operation. Therefore, once the Unlock Bypass command is issued, only
the two-cycle program and erase bypass commands are required. The Unlock Bypass Command
is ignored if the Secured Silicon sector is enabled. To return back to normal operation, the Unlock
Bypass Reset Command must be issued.
The following four sections describe the commands that may be executed within the unlock by-
pass mode.
Unlock Bypass Program Command
The Unlock Bypass Program command is a two-cycle command that consists of the actual pro-
gram command (A0h) and the program address/data combination. This command does not
require the two-cycle
unlock
sequence since the Unlock Bypass command was previously issued.
As with the standard program command, multiple Unlock Bypass Program commands can be is-
sued once the Unlock Bypass command is issued.
To return back to standard read operations, the Unlock Bypass Reset command must be issued.
The Unlock Bypass Program Command is ignored if the Secured Silicon sector is enabled.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料
PDF描述
S29CD016G0JFFM100 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016G0JFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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