參數(shù)資料
型號： S29CD016G0JFFM012
廠商： Spansion Inc.
英文描述： 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
中文描述： 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內存/輸出
文件頁數(shù)： 51/87頁
文件大?。?/td> 792K
代理商： S29CD016G0JFFM012
November 14, 2005 S29CD-G_00_B0
S29CD-G Flash Family
49
P r e l i m i n a r y
mediately consecutive reads to the same address. During the Sector Erase operation and also in
Erase suspend mode, two immediately consecutive readings from the erase-suspended sector
causes DQ2 to toggle. DQ2 does not toggle if reading from a non-busy (non-erasing) sector
(stored data is read). No bits are toggled during program suspend mode. Software must keep
track of the fact that the device is in a suspended mode.
After entering the erase-suspend-read mode, the system may read or program within any non-
suspended sector:
A read operation from the erase-suspended bank returns polling data during the first 8 μs
after the erase suspend command is issued; read operations thereafter return array data.
Read operations from the other bank return array data with no latency.
A program operation while in the erase suspend mode is the same as programming in the
regular program mode, except that the data must be programmed to a sector that is not
erase suspended. Write operation status is obtained in the same manner as a normal pro-
gram operation.
Sector Erase and Program Resume Command
The Sector Erase and Program Resume command (30h) resumes a Sector Erase or Program op-
eration that was suspended. Any further writes of the Sector Erase and Program Resume
command ignored. However, another Sector Erase and Program Suspend command can be writ-
ten after the device resumes sector erase operations. Note that until a suspended program or
erase operation resumes, the contents of that sector are unknown.
The Sector Erase and Program Resume Command is ignored if the Secured Silicon sector is
enabled.
Configuration Register Read Command
The Configuration Register Read command is used to verify the contents of the Configuration Reg-
ister. Execution of this command is only allowed while in user mode and is not available during
Unlock Bypass mode or during Security mode. The Configuration Register Read command is pre-
ceded by the standard two-cycle
unlock
sequence, followed by the Configuration Register Read
command (C6h), and finally followed by performing a read operation to the bank address speci-
fied when the C6h command was written. Reading the other bank results in reading the flash
memory contents. The contents of the Configuration Register are place on DQ15–DQ0. Contents
of DQ31–DQ16 are XXXXh and should be ignored. The user should execute the Read/Reset com-
mand to place the device back in standard user operation after executing the Configuration
Register Read command.
The Configuration Register Read Command is fully operational if the Secured Silicon sector is
enabled.
Configuration Register Write Command
The Configuration Register Write command is used to modify the contents of the Configuration
Register. Execution of this command is only allowed while in user mode and is not available during
Unlock Bypass mode or during Security mode. The Configuration Register Write command is pre-
ceded by the standard two-cycle
unlock
sequence, followed by the Configuration Register Write
command (D0h), and finally followed by writing the contents of the Configuration Register to any
address. The contents of the Configuration Register are placed on DQ31–DQ0. The contents of
DQ31–DQ16 are XXXXh and are ignored. Writing the Configuration Register while an Embedded
Algorithm or Erase Suspend modes are executing results in the contents of the Configuration
Register not being updated.
The Configuration Register Read Command is fully operational if the Secured Silicon sector is
enabled.
相關PDF資料
PDF描述
S29CD016G0JFFM100 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
相關代理商/技術參數(shù)
參數(shù)描述
S29CD016G0JFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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