參數(shù)資料
型號： S29CD016G0JFFM012
廠商： Spansion Inc.
英文描述： 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
中文描述： 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內(nèi)存/輸出
文件頁數(shù)： 46/87頁
文件大?。?/td> 792K
代理商： S29CD016G0JFFM012
44
S29CD-G Flash Family
S29CD-G_00_B0 November 14, 2005
P r e l i m i n a r y
operation. The command sequence should be reinitiated once that bank returns to reading array
data, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries.
A bit cannot be pro-
grammed from a
0
back to a
1
.
Attempting to do so may halt the operation and set DQ5 to
1
,
or cause the Data# Polling algorithm to indicate the operation was successful. However, a suc-
ceeding read shows that the data is still
0
. Only erase operations can convert a
0
to a
1
.
Accelerated Program Command
The Accelerated Chip Program mode is designed to improve the Word or Double Word program-
ming speed. Improving the programming speed is accomplished by using the ACC pin to supply
both the wordline voltage and the bitline current instead of using the V
PP
pump and drain pump,
which is limited to 2.5 mA. Because the external ACC pin is capable of supplying significantly large
amounts of current compared to the drain pump, all 32 bits are available for programming with
a single programming pulse. This is an enormous improvement over the standard 5-bit program-
ming. If the user is able to supply an external power supply and connect it to the ACC pin,
significant time savings are realized.
In order to enter the Accelerated Program mode, the ACC pin must first be taken to V
HH
(12 V ±
0.5 V) and followed by the one-cycle command with the program address and data to follow. The
Accelerated Chip Program command is only executed when the device is in Unlock Bypass mode
and during normal read/reset operating mode.
In this mode, the write protection function is bypassed unless the PPB Lock Bit = 1.
The Accelerated Program command is not permitted if the Secured Silicon sector is enabled.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using
the standard program command sequence. The unlock bypass command sequence is initiated by
first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass
command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass pro-
gram command sequence is all that is required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the pro-
gram address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting
in faster total programming time.
Table 39 on page 41
and
Table 41 on page 54
show the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset com-
mands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock
bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the
data 00h. Addresses are don’t care for both cycles. The device then returns to reading array data.
Figure 4 on page 45
illustrates the algorithm for the program operation. See
Erase/Program
Operations
on page 73
for parameters, and to
Figure 21 on page 74
and
Figure 22 on page 74
for timing diagrams.
相關(guān)PDF資料
PDF描述
S29CD016G0JFFM100 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016G0JFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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