參數(shù)資料
型號(hào)： S29CD016G0JFFM012
廠商： Spansion Inc.
英文描述： 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
中文描述： 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動(dòng)，同步讀/寫閃存與VersatileI內(nèi)存/輸出
文件頁(yè)數(shù)： 10/87頁(yè)
文件大?。?/td> 792K
代理商： S29CD016G0JFFM012
8
S29CD-G Flash Family
S29CD-G_00_B0 November 14, 2005
P r e l i m i n a r y
Figures
Figure 1.
Figure 2.
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Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Asynchronous Read Operation............................................................................................................................................................................27
End of Burst Indicator (IND/WAIT#) Timing for Linear 8-Word Burst Operation...........................................................................29
Initial Burst Delay Control.....................................................................................................................................................................................30
Program Operation..................................................................................................................................................................................................45
Erase Operation........................................................................................................................................................................................................48
Data# Polling Algorithm..........................................................................................................................................................................................57
Toggle Bit Algorithm................................................................................................................................................................................................60
Maximum Negative Overshoot Waveform......................................................................................................................................................62
Maximum Positive Overshoot Waveform.........................................................................................................................................................62
I
CC1
Current vs. Time (Showing Active and Automatic Sleep Currents)................................................................................................65
Typical I
CC1
vs. Frequency......................................................................................................................................................................................65
Test Setup....................................................................................................................................................................................................................66
Input Waveforms and Measurement Levels.....................................................................................................................................................66
V
CC
and V
IO
Power-up Diagram..........................................................................................................................................................................67
Conventional Read Operations Timings............................................................................................................................................................68
Burst Mode Read.......................................................................................................................................................................................................70
Asynchronous Command Write Timing............................................................................................................................................................70
Synchronous Command Write/Read Timing.....................................................................................................................................................71
RESET# Timings.........................................................................................................................................................................................................72
WP# Timing................................................................................................................................................................................................................72
Chip/Sector Erase Operation Timings................................................................................................................................................................74
Back-to-Back Cycle Timings..................................................................................................................................................................................74
Data# Polling Timings (During Embedded Algorithms)................................................................................................................................75
Toggle Bit Timings (During Embedded Algorithms).......................................................................................................................................75
DQ2 vs. DQ6 for Erase/Erase Suspend Operations......................................................................................................................................76
Synchronous Data Polling Timing/Toggle Bit Timings....................................................................................................................................76
Sector Protect/Unprotect Timing Diagram......................................................................................................................................................77
Alternate CE# Controlled Write Operation Timings...................................................................................................................................78
相關(guān)PDF資料
PDF描述
S29CD016G0JFFM100 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016G0JFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
S29CD016G0JFFM200 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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