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參數(shù)資料
| 型號： | S29CD016G0JFFM012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內(nèi)存/輸出 |
| 文件頁數(shù)： | 26/87頁 |
| 文件大?。?/td> | 792K |
| 代理商： | S29CD016G0JFFM012 |
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24
S29CD-G Flash Family
S29CD-G_00_B0 November 14, 2005
P r e l i m i n a r y
The internal state machine is set for reading array data upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the memory content occurs during the power
transition. No command is necessary in this mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the command register con-
tents are altered.
Address access time (t
ACC
) is the delay from stable addresses to valid output data. The chip en-
able access time (t
CE
) is the delay from stable addresses and stable CE# to valid data at the
output pins. The output enable access time (t
OE
) is the delay from the falling edge of OE# to valid
data at the output pins (assuming the addresses were stable for at least t
ACC
–t
OE
time and CE#
is asserted for at least t
CE
–t
OE
time).
See
Reading Array Data in Non-burst Mode
and
Reading Array Data in Burst Mode
for more infor-
mation. Refer to the
Asynchronous Read Operations
table for timing specifications and to
Figure 15
for the timing diagram. I
CC1
in the DC Characteristics table represents the active cur-
rent specification for reading array data.
Simultaneous Read/Write Operations Overview
Overview
The Simultaneous Read/Write feature allows embedded program or embedded erase operation to
be executed in the Small Bank, while reading from the Large Bank. The opposite case is not valid.
Note:
Please refer to the Memory Map
Table 23
,
Table 24
,
Table 25
, and
Table 26
for Small and Large Bank assignments.
Program/ Erase Suspend and Simultaneous Operation
There is no restriction to implementing a program-suspend or erase-suspend during a simulta-
neous operation.
Common Flash I nterface ( CFI ) and Passw ord Program/ Verify
and Simultaneous Operation
Simultaneous read/write operation is disabled during the CFI and Password Program/Verify oper-
ation, including PPB program/erase and unlocking a password operation. Only array data can be
read in the Large Bank during a simultaneous operation.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facilitate faster programming. Once the device
enters the Unlock Bypass mode, only two write cycles are required to program a word or byte,
instead of four. See
Sector Erase and Program Suspend Command
on page 47
for details on pro-
gramming data to the device using both standard and Unlock Bypass command sequences.
Table 28. Allowable Conditions for Simultaneous Operation
Small Bank
Large Bank
Embedded Erase
Burst (Synchronous) Read or
Asynchronous Read
Embedded Program
Burst (Synchronous) Read or
Asynchronous Read
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CD016G0JFFM100 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM102 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM110 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM112 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM200 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0JFFM100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM102 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM200 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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