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參數(shù)資料
| 型號： | S29CD016G0JFFM012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內(nèi)存/輸出 |
| 文件頁數(shù)： | 29/87頁 |
| 文件大?。?/td> | 792K |
| 代理商： | S29CD016G0JFFM012 |
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November 14, 2005 S29CD-G_00_B0
S29CD-G Flash Family
27
P r e l i m i n a r y
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Note:
The autoselect codes can also be accessed in-system via command sequences. See
Table 40 on page 48
and
Table 42
on page 55
.
Asynchronous Read Operation (Non-Burst)
The device has two control functions which must be satisfied in order to obtain data at the out-
puts. CE# is the power control and is used for device selection. OE# is the output control and is
used to gate data to the output pins if the device is selected. The device is powered-up in an asyn-
chronous read mode. In the asynchronous mode the device has two control functions which must
be satisfied in order to obtain data at the outputs. CE# is the power control and is used for device
selection. OE# is the output control and is used to gate data to the output pins if the device is
selected.
Address access time (t
ACC
) is equal to the delay from stable addresses to valid output data. The
chip enable access time (t
CE
) is the delay from the stable addresses and stable CE# to valid data
at the output pins. The output enable access time is the delay from the falling edge of OE# to
valid data at the output pins (assuming the addresses are stable for at least t
ACC
–t
OE
time).
Note:
Operation is shown for the 32-bit data bus. For the 16-bit data bus, A-1 is required.
Figure 1. Asynchronous Read Operation
Synchronous (Burst) Read Operation
The device is capable of performing burst read operations to improve total system data through-
put. The 2, 4, and 8 double word accesses are configurable as linear burst accesses. All burst
Table 29. S29CD-G Flash Family Autoselect Codes (High Voltage Method)
Description
CE#
OE#
W E#
A19
to
A11
A10
A9
A8 A7 A6
A5
to
A4
A3 A2 A1 A0
DQ7
to
DQ0
Manufacturer ID
:
Spansion
L
L
H
X
X
V
ID
X
X
L
X
X
X
L
L
0001h
A
Read Cycle 1
L
L
H
X
X
V
ID
X
L
L
X
L
L
L
H
007Eh
Read Cycle 2
L
L
H
X
X
V
ID
X
L
L
L
H
H
H
L
0036h (16Mb)
0009h (32Mb)
Read Cycle 3
L
L
H
X
X
V
ID
X
L
L
L
H
H
H
H
0000h
Ordering Option 00
0001h
Ordering Option 01
PPB Protection Status
L
L
H
SA
X
V
ID
X
L
L
L
L
L
H
L
0000h (unprotected)
0001h (protected)
D0
D1
D2
D3
D3
CE#
CLK
ADV#
Addresses
Data
OE#
WE#
IND/WAIT#
V
IH
Float
V
OH
Address 0
Address 1
Address 2
Address 3
Float
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| S29CD016G0JFFM100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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| S29CD016G0JFFM110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFFM112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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