參數(shù)資料
型號: HB52E169E12
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 50/53頁
文件大小: 1737K
代理商: HB52E169E12
HB52E169E12-F
50
Power Down Mode
Initialization Sequence
CK
CKE
S
RE
CE
W
BA
Address
DQMB
Din
Dout
$
Burst length = 4
= V or V
IL
,
4
5
=
>
E
F
N
%
'
/
0
8
'
/
!
"
.
/
6
7
@
H
P
!
"
+
-
.
6
>
G
O
P
!
%
&
$
%
-
56
=
>
F
G
N
O%
Precharge command
If needed
Power down entry
Active Bank 0
Power down
mode exit
8
A
I
J
'
(
/
0
8
9
/
8
9
@
A
H
I
J
"
#
+
/
7
8
@
H
I
/
7
8
@
H
I
CKE Low
R: a
A10=1
RP
t
#
High-Z
Power down cycle
RE
-
CE
delay = 3
CE
latency = 3
7
8
9
10
52
53
54
48
49
50
51
!
(
)
1
2
:
G
O
P
Auto Refresh
Bank active
RC
t
RC
t
Auto Refresh
Valid
C
K
L
0
1
2
3
4
5
6
CK
CKE
S
RE
CE
W
Address
DQMB
DQ
8
9
A
B
J
A
I
J
7
@
A
H
I
.
7
@
H
t
valid
RSA
tRP
All banks
Precharge
Mode register
@
A
I
/
8
9
A
V
IH
V
IH
!
*
!
!
)
55
High-Z
'
(
/
0
8
9
A
3
4
;
<
D
E
M
4
<
=
D
E
M
N
/
7
8
A
)
B
C
K
9
B
C
K
6
G
P
code
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