參數(shù)資料
型號(hào)： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊(cè)SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 24/53頁(yè)
文件大小： 1737K
代理商： HB52E169E12
HB52E169E12-F
24
Burst read and burst write:
Burst write is performed for the specified burst length starting from the column
address specified in the write cycle.
Burst read and single write:
Data is only written to the column address specified during the write cycle,
regardless of the burst length.
A7:
Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.
A6, A5, A4: (LMODE):
These pins specify the CE latency.
A3: (BT):
A burst type is specified. When full-page burst is performed, only "sequential" can be selected.
A2, A1, A0: (BL):
These pins specify the burst length.
A2 A1
A0
Burst Length
BT=0
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
1
2
4
8
R
R
1
1
1
F.P.
BT=1
1
1
0
R
1
2
4
8
R
R
R
R
A3
0 Sequential
1
Interleave
Burst Type
A6
0
0
0
0
1
A5
0
0
1
1
X
A4 CAS Latency
0
1
0
1
X
R
R
3*
4
R
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPCODE
0
LMODE
BT
BL
A9
0
0
1
1
R
Write mode
Burst read and burst write
A8
0
1
0
1
Burst read and single write
R
F.P. = Full Page
R is Reserved (inhibit)
X: 0 or 1
Note: Only -6A.
A11
A10
A10
X
X
X
A11
0
X
X
X
0
A12
A13
A13
0
X
X
X
A12
0
X
X
X
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