- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370429 > HB52E169E12 (Hitachi,Ltd.) 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) PDF資料下載
參數(shù)資料
| 型號(hào)： | HB52E169E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| 中文描述： | 128 MB的注冊SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 1/53頁 |
| 文件大?。?/td> | 1737K |
| 代理商： | HB52E169E12 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HB52E169E12-F
128 MB Registered SDRAM DIMM
16-Mword
×
72-bit, 100 MHz Memory Bus, 1-Bank
Module
(18 pcs of 16 M
×
4 Components)
PC100SDRAM
ADE-203-1055 (Z)
Preliminary
Rev. 0.0
Apr. 16, 1999
Description
The HB52E169E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52E169E12 is a 16M
×
72
×
1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 64-Mbit SDRAM
(HM5264405FTT) sealed in TSOP package, 1 piece of PLL clock driver (2509), 2 pieces of register driver
(16835) and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of the
HB52E169E12 is 168-pin socket type package (dual lead out). Therefore, the HB52E169E12 makes high
density mounting possible without surface mount technology. The HB52E169E12 provides common data in-
puts and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.
Features
Fully compatible with: JEDEC standard outline registered 8-byte DIMM
— Intel PCB Reference design (Rev.1.2)
168-pin socket type package (dual lead out)
— Outline: 133.37 mm (Length)
×
43.18 mm (Height)
×
4.00 mm (Thickness)
— Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8/full page
2 variations of burst sequence
— Sequential (BL = 1/2/4/8/full page)
— Interleave (BL = 1/2/4/8)
Programmable CE latency: 3/4 (HB52E169E12-A6F)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E169E1-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E169EN-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E328EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E328EM-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E329EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。