參數(shù)資料
型號(hào)： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊(cè)SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 26/53頁(yè)
文件大小： 1737K
代理商： HB52E169E12
HB52E169E12-F
26
CE Latency
Burst Length
Write operation:
Burst write or single write mode is selected by the OPCODE (A13, A12, A11, A10, A9,
A8) of the mode register.
1. Burst write:
A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts
in the next clock as a write command set. (The latency of data input is 1 clock.) The burst length can be set
to 1, 2, 4, 8, and full-page, like burst read operations. The write start address is specified by the column ad-
dress (and the bank select address (BA) at the write command set cycle.
READ
CK
Command
Dout
ACTV
Row
Column
Address
CL = 3
CL = 4
out 0
out 1
out 2
out 3
out 0
out 1
out 2
out 3
t
RCD
CL =
CE
latency
Burst Length = 4
READ
CK
Command
Dout
ACTV
Row
Column
out 0
out 6
out 7
out 8
Address
out 0 out 1
out 4
out 5
out 0
out 1 out 2 out 3
BL = 1
out 0 out 1 out 2
out 3
out 0
out 1 out 2 out 3
out 6
out 7
out 4
out 5
out 0-1
out 0
out 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
BL : Burst Length
CE
Latency = 3
相關(guān)PDF資料
PDF描述
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HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
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