參數(shù)資料
型號: HB52E169E12
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 44/53頁
文件大?。?/td> 1737K
代理商: HB52E169E12
HB52E169E12-F
44
Write Cycle
CK
CKE
S
t
RAS
t
RCD
,
-
4
5
<
"
#
"
#
$
+
,
3
#
$
+
RE
CE
W
BA
A10
Address
Din
Dout
t
CH
t
CS
t
CKH
t
t
CK
t
DH
t
DH
CKL
t
DH
t
DH
t
DS
t
DS
t
DS
t
DS
t
RP
t
RC
t
DPL
Bank 0
Write
t
CH
t
CS
Bank 0
Bank 0
Precharge
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
CH
t
CS
t
AH
t
AS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
CH
t
CS
t
AH
t
AS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
"
)
*
1
2
8
9
$
%
!
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(
)
0
1
8
.
/
6
7
=
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0
/0
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;
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8
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&
,
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4
5
;
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.
5
6
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=
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7
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$
%
&
-
&
V
IH
CE
latency = 3
Burst length = 4
Bank 0 access
= V or V
IH
!
"
IL
DQMB
相關PDF資料
PDF描述
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
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HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
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