參數(shù)資料
型號: HB52E169E12
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 43/53頁
文件大?。?/td> 1737K
代理商: HB52E169E12
HB52E169E12-F
43
Timing Waveforms
Read Cycle
Bank 0
Bank 0
Read
CK
CKE
S
t
RAS
t
RCD
t
CH
t
CS
DQMB
#
0
CE
latency = 3
Burst length = 4
Bank 0 access
= V or V
IL
1
8
9
0
1
8
9
3
:
;
3
:
;
1
8
9
1
8
9
;
<
;
<
RE
CE
W
BA
+
2
3
:
+
2
3
:
!
"
)
*
0
1
8
!
"
)
*
0
1
8
/
7
:
(
0
78
"
*
+
2
:
1
9
:
A10
Address
Din
Dout
t
CH
t
CS
t
CKH
t
t
CK
CKL
t
t
RC
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
CH
t
CS
t
AH
t
AS
t
AH
t
AS
t
AH
t
AS
V
IH
Bank 0
Precharge
,
3
4
<
3
;
<
;
t
AC
t
AC
t
AC
t
OH
t
OH
t
OH
t
OH
t
AC
2
:
;
t
LZ
,
-
4
t
HZ
%
,
-
3
4
;
<
C
D
K
L
'
/
6
7
>
&
'
.
/
5
6
<
=
&
'
.
/
5
6
<
=
$
%
,
-
4
$
%
,
-
4
%
&
-
.
4
5
<
%
&
-
.
4
5
<
"
#
+
6
>
#
$
+
,
#
$
+
,
(
(
'
'
'
/
6
7
>
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