參數(shù)資料
型號(hào)： HB52E169E12
廠商： Hitachi,Ltd.
英文描述： 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述： 128 MB的注冊(cè)SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 29/53頁(yè)
文件大?。?/td> 1737K
代理商： HB52E169E12
HB52E169E12-F
29
Single Write
Full-page Burst Stop
Burst stop command during burst read:
The burst stop (BST) command is used to stop data output during
a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst read. The
timing from command input to the last data changes depending on the CE latency setting. In addition, the
BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2, 4 and 8.
CE Latency = 3, Burst Length = full page
CE latency
3
4
BST to valid data
2
3
BST to high impedance
3
4
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
l = 2 clocks
CK
Command
Dout
out
out
out
out
l = 3 clocks
BST
out
out
out
相關(guān)PDF資料
PDF描述
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
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HB52E169EN-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E328EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
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