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參數(shù)資料
| 型號： | HB52E169E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| 中文描述： | 128 MB的注冊SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 36/53頁 |
| 文件大小： | 1737K |
| 代理商： | HB52E169E12 |
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HB52E169E12-F
36
2. Same bank:
The consecutive write command from read with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1.
Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. However, in case of a burst write, data will continue to be written until one clock before the read
command is executed. The internal auto-precharge of one bank starts at the next clock of the second com-
mand.
Write with Auto Precharge to Read Command Interval
(Different bank)
2. Same bank:
The consecutive read command from write with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Read command to Precharge command interval (same bank):
CK
Command
BA
Dout
Din
CL = 3
CL = 4
READ A
WRIT
in B0
in B1
in B2
in B3
Burst Length = 4
bank0
Read A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
High-Z
CK
Command
BA
Dout
Din
WRIT A
READ
out B0
out B1
out B2
out B3
CE
Latency = 4
Burst Length = 4
bank0
Write A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
in A0
相關PDF資料 |
PDF描述 |
|---|---|
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E169E1-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E169EN-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E328EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E328EM-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
| HB52E329EM-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM |
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