參數(shù)資料
型號(hào): HB52E169E12
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 18/53頁
文件大?。?/td> 1737K
代理商: HB52E169E12
HB52E169E12-F
18
Note: H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
Clock suspend mode entry:
The SDRAM module enters clock suspend mode from active mode by setting
CKE to Low. The clock suspend mode changes depending on the current status (1 clock before) as shown
below.
ACTIVE clock suspend:
This suspend mode ignores inputs after the next clock by internally maintaining
the bank active status.
READ suspend and READ with Auto-precharge suspend:
The data being output is held (and continues
to be output).
WRITE suspend and WRIT with Auto-precharge suspend:
In this mode, external signals are not accept-
ed. However, the internal state is held.
Clock suspend:
During clock suspend mode, keep the CKE to Low.
Clock suspend mode exit:
The SDRAM module exits from clock suspend mode by setting CKE to High
during the clock suspend state.
IDLE:
In this state, all banks are not selected, and completed precharge operation.
Auto-refresh command [REF]:
When this command is input from the IDLE state, the SDRAM module
starts auto-refresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.)
During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM
module. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 4096 times are
required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in
the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh,
no precharge command is required after auto-refresh.
Self-refresh entry [SELF]:
When this command is input during the IDLE state, the SDRAM module starts
self-refresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since
self-refresh is performed internally and automatically, external refresh operations are unnecessary.
Power down mode entry:
When this command is executed during the IDLE state, the SDRAM module en-
ters power down mode. In power down mode, power consumption is suppressed by cutting off the initial in-
put circuit.
Self-refresh exit:
When this command is executed during self-refresh mode, the SDRAM module can exit
from self-refresh mode. After exiting from self-refresh mode, the SDRAM module enters the IDLE state.
Power down exit:
When this command is executed at the power down mode, the SDRAM module can exit
from power down mode. After exiting from power down mode, the SDRAM module enters the IDLE state.
Self refresh
Self refresh exit (SELFX)
L
L
L
L
H
H
H
H
L
H
L
H
H
×
H
×
H
×
H
×
H
×
H
×
×
×
×
×
Power down
Power down exit
Current state
Command
CKE
n - 1
S
RE
CE
W
Address
n
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