參數(shù)資料
型號(hào): HB52E169E12
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 39/53頁(yè)
文件大?。?/td> 1737K
代理商: HB52E169E12
HB52E169E12-F
39
Burst Length = 4 (To write all data)
Bank active command interval:
1. Same bank:
The interval between the two bank-active commands must be no less than t
RC
.
Bank active to bank active for same bank
2. In the case of different bank-active commands:
The interval between the two bank-active commands
must be no less than t
RRD
.
CK
in A0
in A1
in A2
Command
Din
WRIT
PRE/PALL
in A3
DQMB
t
DPL
CK
Command
Address
BA
Bank 0
Active
ACTV
ROW
ACTV
ROW
Bank 0
Active
t
RC
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HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
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