參數(shù)資料
型號(hào)： HB52E648EN
廠商： Hitachi,Ltd.
英文描述： 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述： 512 MB的無(wú)緩沖SDRAM的內(nèi)存（512 MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 134K
代理商： HB52E648EN
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.
HB52E648EN-A6B/B6B,
HB52E649EN-A6B/B6B
512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
(HB52E648EN) 64-Mword
×
64-bit, 2-Bank Module
(16 pcs of 32 M
×
8 Components)
(HB52E649EN) 64-Mword
×
72-bit, 2-Bank Module
(18 pcs of 32 M
×
8 Components)
PC100 SDRAM
ADE-203-1116A (Z)
Preliminary
Rev. 0.1
Nov. 29, 1999
Description
The HB52E648EN, HB52E649EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
have been developed as an optimized main memory solution for 8-byte processor applications. They are
synchronous Dynamic RAM Module, mounted 256-Mbit SDRAMs (HM5225805BTT) sealed in TSOP
package, and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). The HB52E648EN
is organized 32M
×
64
×
2-bank mounted 16 pieces of 256-Mbit SDRAM. The HB52E649EN is organized
32M
×
72
×
2-bank mounted 18 pieces of 256-Mbit SDRAM. An outline of the products is 168-pin socket
type package (dual lead out). Therefore, they make high density mounting possible without surface mount
technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside
each TSOP on the module board.
Features
Fully compatible with : JEDEC standard outline 8-byte DIMM
: Intel PCB Reference design (Rev. 1.0)
168-pin socket type package (dual lead out)
Outline: 133.37 mm (Length)
×
34.925 mm (Height)
×
4.00 mm (Thickness)
Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
相關(guān)PDF資料
PDF描述
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E648EN-A6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E648EN-B6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E649E12 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-A6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
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