參數(shù)資料
型號(hào): HB52E648EN
廠商: Hitachi,Ltd.
英文描述: 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述: 512 MB的無(wú)緩沖SDRAM的內(nèi)存(512 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 10/29頁(yè)
文件大?。?/td> 134K
代理商: HB52E648EN
HB52E648EN/HB52E649EN-A6B/B6B
10
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
35
Data signal input hold time
0
0
0
1
0
0
0
0
10
1.0 ns
36 to 61 Superset information
0
0
0
0
0
0
0
0
00
Future use
62
SPD data revision code
0
0
0
1
0
0
1
0
12
Rev.1.2A
63
Checksum for bytes 0 to 62
(HB52E648EN-A6B)
1
0
1
1
1
0
1
0
BA
186
(HB52E648EN-B6B)
0
0
1
1
1
0
1
0
3A
58
(HB52E649EN-A6B)
1
1
0
0
1
1
0
0
CC
204
(HB52E649EN-B6B)
0
1
0
0
1
1
0
0
4C
76
64
Manufacturer’s JEDEC ID
code
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71 Manufacturer’s JEDEC ID
code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
× ×
*
3
(ASCII-
8bit code)
73
Manufacturer’s part number
0
1
0
0
1
0
0
0
48
H
74
Manufacturer’s part number
0
1
0
0
0
0
1
0
42
B
75
Manufacturer’s part number
0
0
1
1
0
1
0
1
35
5
76
Manufacturer’s part number
0
0
1
1
0
0
1
0
32
2
77
Manufacturer’s part number
0
1
0
0
0
1
0
1
45
E
78
Manufacturer’s part number
0
0
1
1
0
1
1
0
36
6
79
Manufacturer’s part number
0
0
1
1
0
1
0
0
34
4
80
Manufacturer’s part number
(HB52E648EN)
0
0
1
1
1
0
0
0
38
8
(HB52E649EN)
0
0
1
1
1
0
0
1
39
9
81
Manuf ac ur er s par number
0
1
0
0
0
1
0
1
45
E
82
Manuf ac ur er s par number
0
1
0
0
1
1
1
0
4E
N
83
Manuf ac ur er s par number
0
0
1
0
1
1
0
1
2D
84
Manuf ac ur er s part number
( HB52E648EN/ 649EN- A6B) 0
1
0
0
0
0
0
1
41
A
( HB52E648EN/ 649EN- B6B) 0
1
0
0
0
0
1
0
42
B
85
Manuf ac ur er s par number
0
0
1
1
0
1
1
0
36
6
86
Manuf ac ur er s par number
0
1
0
0
0
0
1
0
42
B
87
Manuf ac ur er s par number
0
0
1
0
0
0
0
0
20
( Spac e)
88
Manuf ac ur er s par number
0
0
1
0
0
0
0
0
20
( Spac e)
相關(guān)PDF資料
PDF描述
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E648EN-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E648EN-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E649E12 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM