參數(shù)資料
型號(hào): H5MS5162DFR-K3M
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù): 9/62頁(yè)
文件大?。?/td> 1314K
代理商: H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
17
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
CURRENT STATE BANK
n TRUTH TABLE (COMMAND TO BANK m)
Current State
Command
Action
Notes
CS
RAS
CAS
WE
Description
Any
H
X
DESELECT (NOP)
Continue previous Operation
L
H
NOP
Continue previous Operation
Idle
X
ANY
Any command allowed to bank m
Row Activating,
Active, or Pre-
charging
L
H
ACTIVE
Activate Row
L
H
L
H
READ
Start READ burst
8
L
H
L
WRITE
Start WRITE burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge dis-
abled
L
H
ACTIVE
Activate Row
L
H
L
H
READ
Start READ burst
8
L
H
L
WRITE
Start WRITE burst
8,10
L
H
L
PRECHARGE
Precharge
Write with Auto
precharge dis-
abled
L
H
ACTIVE
Activate Row
L
H
L
H
READ
Start READ burst
8,9
L
H
L
WRITE
Start WRITE burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge
L
H
ACTIVE
Activate Row
L
H
L
H
READ
Start READ burst
5,8
L
H
L
WRITE
Start WRITE burst
5,8,10
L
H
L
PRECHARGE
Precharge
Write with Auto
precharge
L
H
ACTIVE
Activate Row
L
H
L
H
READ
Start READ burst
5,8
L
H
L
WRITE
Start WRITE burst
5,8
L
H
L
PRECHARGE
Precharge
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