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參數(shù)資料
| 型號： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 27/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
33
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
READ to READ
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated. The new READ command should be issued X cycles after the first READ command, where X equals
the number of desired data-out element pairs (pairs are required by the 2n prefetch architecture).
Consecutive Read Bursts
A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are
shown in the first figure of next page. Random read accesses within a page or pages can be performed as shown in
second figure of next page.
/C LK
C LK
D o
n
D o
n
RE A D
N O P
R EA D
N O P
B A ,
C ol
n
C L = 3
C L = 2
D on't C are
1) D o
n (or b): D ata out from colum n n (or colum n b)
2) BA , C ol
n (b) = Bank A, Colum n n (b)
3) Burst Length = 4 or 8 (if 4 , the bursts are concatenated; if 8, the second burst interrupts the first)
4) R ead bursts are to an active row in any bank
5) Show n w ith nom inal tA C, tD Q SC K and tD Q SQ
Co m m an d
A ddress
D Q S
D Q
D Q S
D Q
B A ,
C ol
b
D o
b
D o
b
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| H6E1PX03130001 | 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, PLUG |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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