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參數(shù)資料
| 型號： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 7/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
15
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
CURRENT STATE BANK
n TRUTH TABLE (COMMAND TO BANK n)
Note:
1. The table applies when both CKE
n-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was Self Refresh
or Power Down.
2. DESELECT and NOP are functionally interchangeable.
3. All states and sequences not shown are illegal or reserved.
4. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for precharging.
5. A command other than NOP should not be issued to the same bank while a READ or WRITE Burst with auto precharge is enabled.
6. The new Read or Write command could be auto precharge enabled or auto precharge disabled.
Current State
Command
Action
Notes
CS
RAS
CAS
WE
Description
Any
H
X
DESELECT (NOP)
Continue previous Operation
L
H
NOP
Continue previous Operation
Idle
L
H
ACTIVE
Select and activate row
L
H
AUTO REFRESH
Auto refresh
10
L
MODE REGISTER SET
Mode register set
10
L
H
PRECHARGE
No action if bank is idle
Row Active
L
H
L
H
READ
Select Column & start read burst
L
H
L
WRITE
Select Column & start write burst
L
H
L
PRECHARGE
Deactivate Row in bank (or banks)
4
Read
(without Auto
recharge)
L
H
L
H
READ
Truncate Read &
start new Read burst
5,6
L
H
L
WRITE
Truncate Read &
start new Write burst
5,6,13
L
H
L
PRECHARGE
Truncate Read, start Precharge
L
H
L
BURST TERMINATE
Burst terminate
11
Write
(without Auto
precharge)
L
H
L
H
READ
Truncate Write &
start new Read burst
5,6,12
L
H
L
WRITE
Truncate Write &
start new Write burst
5,6
L
H
L
PRECHARGE
Truncate Write, start Precharge
12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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