參數(shù)資料
型號： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁數(shù)： 3/62頁
文件大?。?/td> 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
REGISTER DEFINITION II
Extended Mode Register Set (EMRS) for Mobile DDR SDRAM
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
0
DS
0
PASR
DS (Drive Strength)
A7
A6
A5
Drive
Strength
0
Full
0
1
Half (Default)
0
1
0
Quarter
0
1
Octant
1
0
Three-Quarters
PASR (Partial Array Self Refresh)
A2
A1
A0
Self Refresh Coverage
0
All Banks (Default)
0
1
Half of Total Bank (BA1=0)
0
1
0
Quarter of Total Bank (BA1=BA0=0)
0
1
Reserved
1
0
Reserved
1
0
1
One Eighth of Total Bank
(BA1 = BA0 = Row Address MSB=0)
1
0
One Sixteenth of Total Bank
(BA1 = BA0 = Row Address 2 MSBs=0)
1
Reserved
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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