參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠(chǎng)商： HYNIX SEMICONDUCTOR INC
元件分類(lèi)： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù)： 45/62頁(yè)
文件大小： 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
5
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
The Hynix H5MS5162DFR series has the special Low Power function of Auto TCSR (Temperature Compensated Self
Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implemented, it enables
to automatically adjust refresh rate according to temperature without external EMRS command.
Deep Power Down Mode is an additional operating mode for Low Power DDR SDRAM (Mobile DDR SDRAM). This mode
can achieve maximum power reduction by removing power to the memory array within Low Power DDR SDRAM
(Mobile DDR SDRAM). By using this feature, the system can cut off almost all DRAM power without adding the cost of
a power switch and giving up mother-board power-line layout flexibility.
All inputs are LVCMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).
The Hynix H5MS5162DFR series is available in the following package:
- 60Ball FBGA [size: 8mm x 10mm, t=1.0mm
max]
512M Mobile DDR SDRAM ORDERING INFORMATION
Part Number
Clock Frequency
Temperature
Organization
Interface
Package
H5MS5162DFR-E3M
200MHz(CL3) / 83MHz(CL2)
Mobile Temp.
-30
oC ~ 85oC
4banks x 8Mb x 16
LVCMOS
Lead &
Halogen
Free
H5MS5162DFR-J3M
166MHz(CL3) / 83MHz(CL2)
H5MS5162DFR-K3M
133MHz(CL3) / 83MHz(CL2)
H5MS5162DFR-L3M
100MHz(CL3) / 66MHz(CL2)
相關(guān)PDF資料
PDF描述
H6101NL DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S)
H6E1PC03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E1PX03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, PLUG
H6E2PC03130001 MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E2PX03130001 MULTIWAY RACK AND PANEL CONN, PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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