參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù)： 30/62頁(yè)
文件大小： 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
36
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig. for the case of nominal
tDQSS.
Read to Write
/CLK
CLK
D o
n
D o
n
REA D
BST
N O P
W R ITE
N O P
BA ,
Col
n
CL = 3
CL = 2
Don't Care
1) D O
n = D ata O ut from colum n n; D I b = D ata In to colum n b
2) Burst length = 4 or 8 in the cases show n; if the burst length is 2, the BST com m and can be om m itted
3) Show n w ith nom inal tAC, tD Q SCK and tD QSQ
Com m and
A ddress
D Q S
D Q
D Q S
D Q
BA,
Col
b
N O P
DM
REA D
BST
N O P
BA ,
Col
n
Com m and
A ddress
BA,
Col
b
W RITE
tD QSS
D I
b
DI
b
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
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