DSP56321 Technical Data, Rev. 11
2-2
Freescale Semiconductor
Specifications
2.2 Thermal Characteristics
2.3 DC Electrical Characteristics
Table 2-2.
Thermal Characteristics
Thermal Resistance Characteristic
Symbol
MAP-BGA
Value
Unit
Junction-to-ambient, natural convection, single-layer board (1s)
1,2
R
θ
JA
44
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Junction-to-ambient, natural convection, four-layer board (2s2p)
1,3
R
θ
JMA
25
Junction-to-ambient, @200 ft/min air flow, single-layer board (1s)
1,3
R
θ
JMA
35
Junction-to-ambient, @200 ft/min air flow, four-layer board (2s2p)
1,3
R
θ
JMA
22
Junction-to-board
4
R
θ
JB
13
Junction-to-case thermal resistance
5
R
θ
JC
7
Notes:
1.
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
Per JEDEC JESD51-6 with the board horizontal.
Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
2.
3.
4.
5.
Table 2-3.
DC Electrical Characteristics
7
Characteristics
Symbol
Min
Typ
Max
Unit
Supply voltage
1
:
Core (V
CCQL
)
I/O (V
CCQH
, V
CCA
, V
CCD
, V
CCC
, V
CCH
, and V
CCS
)
Input high voltage
D[0–23], BG, BB, TA
MOD/IRQ
2
RESET, PINIT/NMI and all
JTAG/ESSI/SCI/Timer/HI08 pins
EXTAL
9
1.5
3.0
1.6
3.3
1.7
3.6
V
V
V
IH
V
IHP
V
IHX
2.0
2.0
0.8
×
V
CCQH
—
—
—
V
CCQH
+ 0.3
V
CCQH
+ 0.3
V
CCQH
V
V
V
Input low voltage
D[0–23], BG, BB, TA, MOD/IRQ
2
, RESET, PINIT
All JTAG/ESSI/SCI/Timer/HI08 pins
EXTAL
9
V
IL
V
ILP
V
ILX
I
IN
I
TSI
–0.3
–0.3
–0.3
—
—
—
0.8
0.8
0.2
×
V
CCQH
10
V
V
V
Input leakage current
–10
—
μ
A
μ
A
High impedance (off-state) input current
(@ 2.4 V / 0.4 V)
Output high voltage
8
TTL (I
OH
= –0.4 mA)
6
CMOS (I
OH
= –10
μ
A)
6
Output low voltage
8
TTL (I
OL
= 3.0 mA)
6
CMOS (I
OL
= 10
μ
A)
6
–10
—
10
V
OH
2.4
V
CCQH
– 0.01
—
—
—
—
V
V
V
OL
—
—
—
—
0.4
0.01
V
V