參數(shù)資料
型號(hào)： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類(lèi)： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫(xiě)Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁(yè)數(shù)： 95/96頁(yè)
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
93
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 29 on page 82
Added Erase Suspend Latency.
Table 32, CE1#/CE2# Timing (S29PL129J only)
Updated table and added a notes section.
Physical Dimensions
Added the VBU056 package.
24.9
Revision A8 (July 29, 2005)
Autoselect Codes (High Voltage Method) Table
Added note: When Polling the SecSi indicator bit the Bank Address (BA) should be set within the address
range 004000h-03FFFFh.
Autoselect Codes for PL129J Table
Added note: When Polling the SecSi indicator bit the A21 to A12 should be set within the address range
004000h-03FFFFh.
Secured Silicon Sector Flash Memory Region
Added sentence: Once the Enter Secured Silicon Sector Command sequence has been entered, the
standard array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the
device has been reset.
Sector Protection Command Definitions Table
Added note 16: Once the Secured Silicon Sector Entry Command sequence has been entered, the standard
array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the device has
been reset.
Valid Combinations
Content the same, tables consolidated to match Ordering Information Descriptions
Connection Diagrams Section
Consolidated Special Package Handling Instructions and put the information before the package/pinout
descriptions.
Added Figure numbers to the connection diagram graphics.
Operating Ranges
Updated operating temperatures.
DC Characteristics Table
Updated V
OH
parameter.
Erase/Program Operations Table
Added t
ESL
parameter
VBK048—48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J)
Updated the product that uses this package from PL127J to PL064J and PL032J
24.10 Revision A9 (September 22, 2006)
64-Ball Fine-Pitch BGA—MCP Compatible—PL127J
Changed ball F9 to A22
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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