參數(shù)資料
型號: S29PL-J60BAW011
廠商: Spansion Inc.
元件分類: DRAM
英文描述: CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: CMOS 3V電壓供電,同步讀/寫Flash存儲器并有增強VersatileIO控制
文件頁數(shù): 13/96頁
文件大?。?/td> 827K
代理商: S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
11
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
4.
Block Diagram
Notes
1. RY/BY# is an open drain output.
2. Amax = A22 (PL127J), A21 (PL129J and PL064J), A20 (PL032J)
3. For PL129J there are two CE# (CE1# and CE2#)
V
CC
V
SS
State
Control
Command
Register
PGM Voltage
Generator
V
CC
Detector
Timer
Erase Voltage
Generator
Input/Output
Buffers
Sector
Switches
Chip Enable
Output Enable
Logic
Y-Gating
Cell Matrix
A
Y-Decoder
X-Decoder
Data Latch
RESET#
RY/BY#
Amax–A3
A2–A0
CE#
OE#
WE#
DQ15–DQ0
V
IO
相關PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關代理商/技術參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control