參數(shù)資料
型號： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制
文件頁數(shù)： 68/96頁
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
66
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see the
DQ7: Data# Polling
on page 64
).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
Table 16.1 on page 68
shows the outputs for Toggle Bit I on DQ6.
Figure 16.2 on page 66
shows the toggle
bit algorithm.
Figure 20.11 on page 80
in shows the toggle bit timing diagrams.
Figure 20.12 on page 80
shows the differences between DQ2 and DQ6 in graphical form. See also the
DQ2: Toggle Bit II
on page 67
.
Figure 16.2
Toggle Bit Algorithm
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the
DQ6:
Toggle Bit I on page 65
and
DQ2: Toggle Bit II on page 67
for more information.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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