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| 型號： | S29PL-J60BAW011 |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制 |
| 文件頁數(shù)： | 73/96頁 |
| 文件大小： | 827K |
| 代理商： | S29PL-J60BAW011 |
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September 22, 2006 S29PL-J_00_A9
S29PL-J
71
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
19. DC Characteristics
Notes
1. The I
CC
current listed is typically less than 5 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is 2 μA.
5. Not 100% tested.
6. In S29PL129J there are two CE# (CE1#, CE2#).
7. Valid CE1#/CE2# conditions: (CE1# = V
IL,
CE2# = V
IH,
) or (CE1# = V
IH,
CE2# = V
IL
) or (CE1# = V
IH,
CE2# = V
IH
)
Table 19.1
CMOS Compatible
Parameter
Parameter
Description (notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET#
Input Load Current
V
CC
= V
CC max
; V
ID
= 12.5 V
35
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; V
ID
= 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(
1
,
2
)
OE# = V
IH
, V
CC
= V
CC max
5 MHz
20
30
mA
10 MHz
45
55
I
CC2
V
CC
Active Write Current (
2
,
3
)
OE# = V
IH
, WE# = V
IL
15
25
mA
I
CC3
V
CC
Standby Current
(2)
CE#, RESET#, WP#/ACC
= V
IO
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
I
CC4
V
CC
Reset Current
(2)
0.2
5
μA
I
CC5
Automatic Sleep Mode
(Notes
2
,
4
)
0.2
5
μA
I
CC6
V
Active Read-While-Program
Current (
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC7
V
Active Read-While-Erase
Current (
1
,
2
)
OE# = V
IH
,
5 MHz
21
45
mA
10 MHz
46
70
I
CC8
V
Active Program-While-Erase-
Suspended Current (
2
,
5
)
OE# = V
IH
17
25
mA
I
CC9
V
CC
Active Page Read Current
(2)
OE# = V
IH
, 8 word Page Read
10
15
mA
V
IL
Input Low Voltage
V
= 1.65–1.95 V
(PL127J and PL129J)
–0.4
0.4
V
V
IO
= 2.7–3.6 V
–0.5
0.8
V
V
IH
Input High Voltage
V
= 1.65–1.95 V
(PL127J AND PL129J)
V
IO
–0.4
V
IO
+0.4
V
V
IO
= 2.7–3.6 V
2.0
V
CC
+0.3
V
V
HH
Voltage for ACC
Program Acceleration
V
CC
= 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
= V
CC min
,
V
= 1.65–1.95 V
(PL127J AND PL129J)
0.1
V
I
OL
= 2.0 mA, V
CC
= V
CC min
,
V
IO
= 2.7–3.6 V
0.4
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC min
,
V
= 1.65–1.95 V
(PL127J AND PL129J)
V
IO
–0.1
V
I
OH
= ––100 μA, V
IO
= V
CC min
V
-
0.2V
V
V
LKO
Low V
CC
Lock-Out Voltage
(5)
2.3
2.5
V
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| S29PL-J60BAW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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