參數(shù)資料
型號(hào)： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類(lèi)： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫(xiě)Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁(yè)數(shù)： 10/96頁(yè)
文件大小： 827K
代理商： S29PL-J60BAW011
8
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
1.2
Standard Flash Memory Features
The device requires a
single 3.0 volt power supply
(2.7 V to 3.6 V) for both read and write functions.
Internally generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard
.
Commands are written to the command register using standard microprocessor write timing. Register
contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass mode
facilitates faster programming times by requiring only two write cycles to program data instead of four. Device
erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle)
status bits
. After a program or erase cycle has been completed, the device is
ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume
feature enables the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is not selected for erasure. True background erase can
thus be achieved. If a read is needed from the Secured Silicon Sector area (One Time Program area) after an
erase suspend, then the user must use the proper command sequence to enter and exit this region.
The
Program Suspend/Program Resume
feature enables the user to hold the program operation to read
data from any sector that is not selected for programming. If a read is needed from the Secured Silicon Sector
area, Persistent Protection area, Dynamic Protection area, or the CFI area, after a program suspend, then the
user must use the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data
is programmed using hot electron injection.
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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