參數(shù)資料
型號： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強(qiáng)VersatileIO控制
文件頁數(shù)： 9/96頁
文件大小： 827K
代理商： S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
7
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
1.
Simultaneous Read/Write Operation with Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory space
into 4 banks, which can be considered to be four separate memory arrays as far as certain operations are
concerned. The device can improve overall system performance by allowing a host system to program or
erase in one bank, then immediately and simultaneously read from another bank with zero latency (with two
simultaneous operations operating at any one time). This releases the system from waiting for the completion
of a program or erase operation, greatly improving system performance.
The device can be organized in both top and bottom sector configurations. The banks are organized as
follows:
1.1
Page Mode Features
The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast
read access speed of random locations within that page.
Bank
PL127J Sectors
PL064J Sectors
PL032J Sectors
A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
8 Mbit (4 Kw x 8 and 32 Kw x 15)
4 Mbit (4 Kw x 8 and 32 Kw x 7)
B
48 Mbit (32 Kw x 96)
24 Mbit (32 Kw x 48)
12 Mbit (32 Kw x 24)
C
48 Mbit (32 Kw x 96)
24 Mbit (32 Kw x 48)
12 Mbit (32 Kw x 24)
D
16 Mbit (4 Kw x 8 and 32 Kw x 31)
8 Mbit (4 Kw x 8 and 32 Kw x 15)
4 Mbit (4 Kw x 8 and 32 Kw x 7)
Bank
PL129J Sectors
CE# Control
1A
16 Mbit (4 Kw x 8 and 32 Kw x 31)
CE1#
1B
48 Mbit (32 Kw x 96)
CE1#
2A
48 Mbit (32 Kw x 96)
CE2#
2B
16 Mbit (4 Kw x 8 and 32 Kw x 31)
CE2#
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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