參數(shù)資料
型號(hào)： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類(lèi)： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫(xiě)Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁(yè)數(shù)： 75/96頁(yè)
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
73
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 20.2
Input Waveforms and Measurement Levels
20.3
V
CC
Ramp Rate
All DC characteristics are specified for a V
CC
ramp rate > 1V/100 μs and V
CC
≥
V
CCQ
- 100 mV. If the V
CC
ramp rate is < 1V/100 μs, a hardware reset required.+
20.4
Read Operations
Notes
1. Not 100% tested.
2. See
Figure 20.1 on page 72
and
Table 20.1 on page 72
for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of V
CC
/2. The time from OE# high to the data bus
driven to V
CC
/2 is taken as t
DF
.
4. S29PL129J has two CE# (CE1#, CE2#).
5. Valid CE1# / CE2# conditions: (CE1# = V
IL
,CE2# = V
IH
) or (CE1# = V
IH
,CE2# = V
IL
) or (CE1# = V
IH,
CE2# = V
IH
)
6. Valid CE1# / CE2# transitions: (CE1# = V
IL
,CE2# = V
IH
) or (CE1# = V
IH
,CE2# = V
IL
) to (CE1# = CE2# = V
IH
)
7. Valid CE1# / CE2# transitions: (CE1# = CE2# = V
IH
) to (CE1# = V
IL
,CE2# = V
IH
) or (CE1# = V
IH
,CE2# = V
IL
)
8. For 70 pF Output Load Capacitance, 2 ns will be added to the above t
ACC
,t
CE
,t
PACC
,t
OE
values for all speed grades
V
IO
0.0 V
V
IO
/2
V
IO
/2
Output
Measurement Level
Input
Table 20.3
Read-Only Operations
Parameter
JEDEC
t
AVAV
t
AVQV
t
ELQV
Description (Notes)
Test Setup
Speed Options
55
60
55
60
55
60
55
60
20
25
20
25
16
16
Unit
ns
ns
ns
ns
ns
ns
ns
Std.
t
RC
t
ACC
t
CE
t
PACC
t
OE
t
DF
t
DF
65
65
65
65
25
70
70
70
70
30
Read Cycle Time
(1)
Address to Output Delay
Chip Enable to Output Delay
Page Access Time
Output Enable to Output Delay
Chip Enable to Output High Z
(3)
Output Enable to Output High Z (
1
,
3
)
Output Hold Time From Addresses,
CE# or OE#, Whichever Occurs First
(3)
Min
Max
Max
Max
Max
Max
Max
CE#, OE# = V
IL
OE# = V
IL
t
GLQV
t
EHQZ
t
GHQZ
30
t
AXQX
t
OH
Min
5
ns
t
OEH
Output Enable Hold Time
(1)
Read
Toggle and Data# Polling
Min
Min
0
10
ns
ns
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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