參數(shù)資料
型號： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制
文件頁數(shù)： 67/96頁
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
65
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 16.1
Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
16.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one
of the banks is in the erase-suspend-read mode.
Table 16.1 on page 68
shows the outputs for RY/BY#.
16.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 400 μs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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